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| publication number 21505 revision e amendment 8 issue date november 11, 2009 am29f400b am29f400b cover sheet data sheet the following document contains info rmation on spansion memory products. continuity of specifications there is no change to this data sheet as a result of offering the device as a spansi on product. any changes that have been made are the result of normal data sheet improvem ent and are noted in the document revision summary. for more information please contact your local sales office for additional information about spansion memory solutions.
2 am29f400b 21505_e8 november 11, 2009 data sheet this page left intentionally blank. data sheet this data sheet states amd?s current technical specifications regarding the products described herein. this data sheet may be revised by subsequent versions or modifications due to changes in technical specifications. publication# 21505 rev: e amendment: 8 issue date: november 11, 2009 am29f400b 4 megabit (512 k x 8-bit/256 k x 16-bit) cmos 5.0 volt-only boot sector flash memory distinctive characteristics single power supply operation ? 5.0 volt-only operation for read, erase, and program operations ? minimizes system level requirements manufactured on 0.32 m process technology ? compatible with 0.5 m am29f400 device high performance ? access times as fast as 45 ns low power consumption (typical values at 5 mhz) ? 1 a standby mode current ? 20 ma read current (byte mode) ? 28 ma read current (word mode) ? 30 ma program/erase current flexible sector architecture ? one 16 kbyte, two 8 kbyte, one 32 kbyte, and seven 64 kbyte sectors (byte mode) ? one 8 kword, two 4 kword, one 16 kword, and seven 32 kword sectors (word mode) ? supports full chip erase ? sector protection features: a hardware method of locking a sector to prevent any program or erase operations within that sector sectors can be locked via programming equipment temporary sector unprotect feature allows code changes in previously locked sectors top or bottom boot block configurations available embedded algorithms ? embedded erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors ? embedded program algorithm automatically writes and verifies data at specified addresses minimum 1,000,000 program/erase cycles per sector guaranteed 20-year data retention at 125 c ? reliable operation for the life of the system package option ? 48-pin tsop ? 44-pin so ? known good die (kgd) (see publication number 21258) compatibility with jedec standards ? pinout and software compatible with single- power-supply flash ? superior inadvertent write protection data# polling and toggle bits ? provides a software method of detecting program or erase operation completion ready/busy# pin (ry/by#) ? provides a hardware method of detecting program or erase cycle completion erase suspend/erase resume ? suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation hardware reset pin (reset#) ? hardware method to reset the device to reading array data 2 am29f400b 21505e8 november 11, 2009 data sheet general description the am29f400b is a 4 mbit, 5.0 volt-only flash memory organized as 524,288 bytes or 262,144 words. the device is offered in 44-pin so and 48-pin tsop packages. the device is also available in known good die (kgd) form. for more information, refer to publica- tion number 21258. the word-wide data (x16) appears on dq15?dq0; the byte-wide (x8) data appears on dq7?dq0. this device is designed to be programmed in- system with the standard system 5.0 volt v cc supply. a 12.0 v v pp is not required for write or erase operations. the device can also be programmed in standard eprom programmers. this device is manufactured using amd?s 0.32 m process technology, and offers all the features and ben- efits of the am29f400, which was manufactured using 0.5 m process technology. the standard device offers access times of 45, 50, 55, 70 and 90 ns, allowing high speed microprocessors to operate without wait states. to eliminate bus contention the device has separate chip enable (ce#), write enable (we#) and output enable (oe#) controls. the device requires only a single 5.0 volt power supply for both read and write functions. internally generated and regulated voltages are provided for the program and erase operations. the device is entirely command set compatible with the jedec single-power-supply flash standard . com- mands are written to the command register using standard microprocessor write timings. register con- tents serve as input to an internal state-machine that controls the erase and programming circuitry. write cycles also internally latch addresses and data needed for the programming and erase operations. reading data out of the device is similar to reading from other flash or eprom devices. device programming occurs by executing the program command sequence. this initiates the embedded program algorithm?an internal algorithm that auto- matically times the program pulse widths and verifies proper cell margin. device erasure occurs by executing the erase command sequence. this initiates the embedded erase algorithm?an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. during erase, the device automatically times the erase pulse widths and verifies proper cell margin. the host system can detect whether a program or erase operation is complete by observing the ry/by# pin, or by reading the dq 7 (data# polling) and dq6/ dq2 (toggle) status bits . after a program or erase cycle has been completed, the device is ready to read array data or accept another command. the sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. the device is fully erased when shipped from the factory. hardware data protection measures include a low v cc detector that automatically inhibits write opera- tions during power transitions. the hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. this can be achieved via programming equipment. the erase suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. true background erase can thus be achieved. the hardware reset# pin terminates any operation in progress and resets the internal state machine to reading array data. the reset # pin may be tied to the system reset circuitry. a system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the flash memory. the system can place the device into the standby mode . power consumption is greatly reduced in this mode. amd?s flash technology combines years of flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effective- ness. the device electrically erases all bits within a sector simultaneously via fowler-nordheim tunneling. the data is programmed using hot electron injection. november 11, 2009 21505e8 am29f400b 3 data sheet table of contents product selector guide . . . . . . . . . . . . . . . . . . . . . 4 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 connection diagrams . . . . . . . . . . . . . . . . . . . . . . 5 pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 6 logic symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ordering information . . . . . . . . . . . . . . . . . . . . . . . 7 device bus operations . . . . . . . . . . . . . . . . . . . . . 8 table 1. am29f400b device bus operations .................................. 8 word/byte configuration .......................................................... 8 requirements for reading array data ..................................... 8 writing commands/command sequences .............................. 8 program and erase operation status ...................................... 9 standby mode .......................................................................... 9 reset#: hardware reset pin ................................................. 9 output disable mode ................................................................ 9 table 2. am29f400bt top boot block sector address table ....... 10 table 3. am29f400bb bottom boot block sector address table.. 10 autoselect mode ..................................................................... 10 table 4. am29f400b autoselect codes (high voltage method) .... 11 sector protection/unprotection ............................................... 11 temporary sector unprotect .................................................. 11 figure 1. temporary sector unprotect operation........................... 11 hardware data protection ...................................................... 12 low v cc write inhibit ...................................................................... 12 write pulse ?glitch? protection........................................................ 12 logical inhibit .................................................................................. 12 power-up write inhibit .................................................................... 12 command definitions . . . . . . . . . . . . . . . . . . . . . 13 reading array data ................................................................ 13 reset command ..................................................................... 13 autoselect command sequence ............................................ 13 word/byte program command sequence ............................. 13 figure 2. program operation .......................................................... 14 chip erase command sequence ........................................... 14 sector erase command sequence ........................................ 14 erase suspend/erase resume commands ........................... 16 figure 3. erase operation............................................................... 16 table 5. am29f400b command definitions................................... 17 write operation status . . . . . . . . . . . . . . . . . . . . 18 dq7: data# polling ................................................................. 18 figure 4. data# polling algorithm ................................................... 18 ry/by#: ready/busy# ........................................................... 19 dq6: toggle bit i .................................................................... 19 dq2: toggle bit ii ................................................................... 19 reading toggle bits dq6/dq2 .............................................. 19 dq5: exceeded timing limits ................................................ 20 dq3: sector erase timer ....................................................... 20 figure 5. toggle bit algorithm......................................................... 20 table 6. write operation status...................................................... 21 absolute maximum ratings . . . . . . . . . . . . . . . . 22 figure 6. maximum negative overshoot waveform ....................... 22 figure 7. maximum positive overshoot waveform......................... 22 operating ranges . . . . . . . . . . . . . . . . . . . . . . . . 22 dc characteristics . . . . . . . . . . . . . . . . . . . . . . . . 23 ttl/nmos compatible .......................................................... 23 cmos compatible .................................................................. 24 test conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 25 figure 8. test setup....................................................................... 25 table 7. test specifications ........................................................... 25 key to switching waveforms. . . . . . . . . . . . . . . . 25 ac characteristics . . . . . . . . . . . . . . . . . . . . . . . . 26 read operations .................................................................... 26 figure 9. read operations timings ............................................... 26 hardware reset (reset#) .................................................... 27 figure 10. reset# timings .......................................................... 27 word/byte configuration (byte#) ...................................... 28 figure 11. byte# timings for read operations............................ 28 figure 12. byte# timings for write operations............................ 28 erase/program operations ..................................................... 29 figure 13. program operation timings.......................................... 30 figure 14. chip/sector erase operation timings .......................... 31 figure 15. data# polling timings (during embedded algorithms). 32 figure 16. toggle bit timings (during embedded algorithms)...... 32 figure 17. dq2 vs. dq6................................................................. 33 temporary sector unprotect .................................................. 33 figure 18. temporary sector unprotect timing diagram .............. 33 alternate ce# controlled eras e/program operations ............ 34 figure 19. alternate ce# controlled write operation timings ...... 35 erase and programming performance . . . . . . . . 36 latchup characteristics . . . . . . . . . . . . . . . . . . . . 36 tsop and so pin capacitance . . . . . . . . . . . . . . 36 data retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 physical dimensions . . . . . . . . . . . . . . . . . . . . . . 37 ts 048?48-pin standard thin small outline package ......... 37 so 044?44-pin small outline package ................................ 38 revision summary . . . . . . . . . . . . . . . . . . . . . . . . 39 revision a (august 1997) ....................................................... 39 revision b (october 1997) ..................................................... 39 revision c (january 1998) ..................................................... 39 revision c+1 (february 1998) ............................................... 39 revision c+2 (april 1998) ....................................................... 39 revision c+3 (june 1998) ...................................................... 39 revision c+4 (august 1998) ................................................... 40 revision d (january 1999) ..................................................... 40 revision d+1 (july 2, 1999) ................................................... 40 revision e (november 15, 1999) ............................................ 40 revision e+1 (november 30, 2000) ....................................... 40 revision e+2 (june 4, 2004) .................................................. 40 revision e+3 (december 22, 2005) ....................................... 40 revision e4 (may 18, 2006) ................................................... 40 revision e5 (november 1, 2006) ............................................ 40 revision e6 (march 3, 2009) .................................................. 40 revision e7 (august 3, 2009) ................................................. 40 revision e8 (november 11, 2009) .......................................... 40 4 am29f400b 21505e8 november 11, 2009 data sheet product selector guide note: see ?ac characteristics? for full specifications. block diagram family part number am29f400b speed option v cc = 5.0 v 5% -45 -50 -55 v cc = 5.0 v 10% -55 -70 -90 max access time, ns (t acc ) 4550557090 max ce# access time, ns (t ce ) 4550557090 max oe# access time, ns (t oe ) 3030303035 input/output buffers x-decoder y-decoder chip enable output enable logic erase voltage generator pgm voltage generator timer v cc detector state control command register v cc v ss we# byte# ce# oe# stb stb dq0 ? dq15 (a-1) sector switches ry/by# reset# data latch y-gating cell matrix address latch a0?a17 november 11, 2009 21505e8 am29f400b 5 data sheet connection diagrams this device is also available in known good die (kgd) form. refer to publication number 21258 for more information. a1 a15 nc a14 a13 a12 a11 a10 a9 a8 nc nc we# reset# nc nc ry/by# a17 a7 a6 a5 a4 a3 a2 1 16 2 3 4 5 6 7 8 17 18 19 20 21 22 23 24 9 10 11 12 13 14 15 a16 dq2 byte# v ss dq15/a-1 dq7 dq14 dq6 dq13 dq9 dq1 dq8 dq0 oe# v ss ce# a0 dq5 dq12 dq4 v cc dq11 dq3 dq10 48 33 47 46 45 44 43 42 41 40 39 38 37 36 35 34 25 32 31 30 29 28 27 26 48-pin tsop?standard pinout 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 nc ry/by# a17 a7 a6 a5 a4 a3 a2 a1 a0 ce# v ss oe# dq0 dq8 dq1 dq9 dq2 dq10 dq3 dq11 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 reset# we# a8 a9 a10 a11 a12 a13 a14 a15 a16 byte# v ss dq15/a-1 dq7 dq14 dq6 dq13 dq5 dq12 dq4 v cc so 6 am29f400b 21505e8 november 11, 2009 data sheet pin configuration a0?a17 = 18 addresses dq0?dq14 = 15 data inputs/outputs dq15/a-1 = dq15 (data input/output, word mode), a-1 (lsb address input, byte mode) byte# = selects 8-bit or 16-bit mode ce# = chip enable oe# = output enable we# = write enable reset# = hardware reset pin, active low ry/by# = ready/busy# output v cc = +5.0 v single power supply (see product selector guide for device speed ratings and voltage supply tolerances) v ss = device ground nc = pin not connected internally logic symbol 18 16 or 8 dq0?dq15 (a-1) a0?a17 ce# oe# we# reset# byte# ry/by# november 11, 2009 21505e8 am29f400b 7 data sheet ordering information standard products amd standard products are available in several packages and operating ranges. the order number (valid combi- nation) is formed by a combination of the elements below. valid combinations valid combinations list configurations planned to be sup- ported in volume for this device. consult the local amd sales office to confirm availability of specific valid combinations and to check on newly released combinations. am29f400b t -45 e f optional processing blank = standard processing 0=v cc = 5.0 v 10%, 55 ns device only (contact an amd representative for more information) temperature range i = industrial (?40 c to +85 c) f = industrial (?40 c to +85 c) with pb-free package e = extended (?55 c to +125 c) k = extended (?55 c to +125 c) with pb-free package package type e = 48-pin thin small outline package (tsop) standard pinout (ts 048) s = 44-pin small outline package (so 044) this device is also available in known good die (kgd) form. see publication number 21258 for more information. speed option see product selector guide and valid combinations boot code sector architecture t = top sector b = bottom sector device number/description am29f400b 4 megabit (512 k x 8-bit/256 k x 16-bit) cmos flash memory 5.0 volt-only read, program and erase valid combinations voltag e range am29f400bt-45, am29f400bb-45, ei, ef, si, sf 5.0 v 5% am29f400bt-50, am29f400bb-50 ei, ef, ee, ek si, sf, se, sk am29f400bt-55, am29f400bb-55 am29f400bt-55, am29f400bb-55 ei0, ef0, ee0, ek0, si0, sf0, se0, sk0 5.0 v 10% am29f400bt-70, am29f400bb-70 ei, ef, ee, ek si, sf, se, sk am29f400bt-90, am29f400bb-90 8 am29f400b 21505e8 november 11, 2009 data sheet device bus operations this section describes the requirements and use of the device bus operations, which are initiated through the internal command register. the command register itself does not occupy an y addressable memory loca- tion. the register is composed of latches that store the commands, along with the address and data informa- tion needed to execute the command. the contents of the register serve as inputs to the internal state machine. the state machine outputs dictate the func- tion of the device. table 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. the following subsections describe each of these operations in further detail. table 1. am29f400b device bus operations legend: l = logic low = v il , h = logic high = v ih , v id = 12.0 0.5 v, x = don?t care, d in = data in, d out = data out, a in = address in note: see the sections onsector group protection and tem porary sector unprotect for more information. word/byte configuration the byte# pin controls whether the device data i/o pins dq15?dq0 operate in the byte or word configura- tion. if the byte# pin is set at logic ?1?, the device is in word configuration, dq15?dq0 are active and con- trolled by ce# and oe#. if the byte# pin is set at logi c ?0?, the device is in byte configuration, and only data i/o pins dq0?dq7 are active and controlled by ce# and oe#. the data i/o pins dq8?dq14 are tri-stated, and the dq15 pin is used as an input for the lsb (a-1) address function. requirements for reading array data to read array data from the outputs, the system must drive the ce# and oe# pins to v il . ce# is the power control and selects the device. oe# is the output control and gates array data to the output pins. we# should remain at v ih . the byte# pin determines whether the device outputs array data in words or bytes. the internal state machine is set for reading array data upon device power-up, or after a hardware reset. this ensures that no spurious alteration of the memory content occurs during the power transition. no command is necessary in th is mode to obtain array data. standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the device data outputs. the device remains enabled for read access until the command register contents are altered. see ?reading array data? for more information. refer to the ac read operations table for timing specifica- tions and to figure 9 for the timing diagram. i cc1 in the dc characteristics table represents the active current specification for re ading array data. writing commands/command sequences to write a command or command sequence (which includes programming data to the device and erasing sectors of memory), the system must drive we# and ce# to v il , and oe# to v ih . for program operations, the byte# pin determines whether the device accepts program data in bytes or words. refer to ?word/byte configuration? for more information. an erase operation can erase one sector, multiple sec- tors, or the entire device. tables 2 and 3 indicate the address space that each sector occupies. a ?sector address? consists of the address bits required to uniquely select a sector. the ?command definitions? section has details on erasing a sector or the entire chip, or suspending/resuming the erase operation. operation ce# oe# we# reset# a0?a17 dq0?dq7 dq8?dq15 byte# = v ih byte# = v il read l l h h a in d out d out high-z write l h l h a in d in d in high-z cmos standby v cc 0.5 v xx v cc 0.5 v x high-z high-z high-z ttl standby h x x h x high-z high-z high-z output disable l h h h x high-z high-z high-z hardware reset x x x l x high-z high-z high-z temporary sector unprotect (see note) x x x v id a in d in d in x november 11, 2009 21505e8 am29f400b 9 data sheet after the system writes the autoselect command sequence, the device enters the autoselect mode. the system can then read autoselect codes from the internal register (which is separate from the memory array) on dq7?dq0. standard read cycle timings apply in this mode. refer to the ?autoselect mode? and ?autoselect command sequence? sections for more information. i cc2 in the dc characteristics table represents the active current specification for the write mode. the ?ac characteristics? section contains timing specification tables and timing diagrams for write operations. program and erase operation status during an erase or program operation, the system may check the status of the operation by reading the status bits on dq7?dq0. standard read cycle timings and i cc read specifications apply. refer to ?the erase resume command is valid only during the erase suspend mode.? for more information, and to ?ac characteris- tics? for timing diagrams. standby mode when the system is not reading or writing to the device, it can place the device in the standby mode. in this mode, current consumption is greatly reduced, and the outputs are placed in the high impedance state, inde- pendent of the oe# input. the device enters the cmos standby mode when the ce# and reset# pins are both held at v cc 0.5 v. (note that this is a more restricted voltage range than v ih .) the device enters the ttl standby mode when ce# and reset# pins are both held at v ih . the device requires standard access time (t ce ) for read access when the device is in either of these standby modes, before it is ready to read data. the device also enters the standby mode when the reset# pin is driven low. refer to the next section, ?reset#: hardware reset pin?. if the device is deselected during erasure or program- ming, the device draws active current until the operation is completed. in the cmos and ttl/nmos-compatible dc charac- teristics tables, i cc3 represents the standby current specification. reset#: hardware reset pin the reset# pin provides a hardware meth od of reset- ting the device to reading array data. when the reset# pin is driven low for at least a period of t rp, the device immediately terminates any operation in progress, tristates all output pins, and ignores all read/ write commands for the duration of the reset# pulse. the device also resets the internal state machine to reading array data. the operation that was interrupted should be reinitiated once the device is ready to accept another command sequence, to ensure data integrity. current is reduced for the duration of the reset# pulse. when reset# is held at v il , the device enters the ttl standby mode; if reset# is held at v ss 0.5 v, the device enters the cmos standby mode. the reset# pin may be tied to the system reset cir- cuitry. a system reset would thus also reset the flash memory, enabling the system to read the boot-up firm- ware from the flash memory. if reset# is asserted during a program or erase oper- ation, the ry/by# pin remains a ?0? (busy) until the internal reset operation is complete, which requires a time of t ready (during embedded algorithms). the system can thus monitor ry/by# to determine whether the reset operation is comp lete. if reset# is asserted when a program or erase operation is not executing (ry/by# pin is ?1?), the reset operation is completed within a time of t ready (not during embedded algo- rithms). the system can read data t rh after the reset# pin returns to v ih . refer to the ac characteristics tables for reset# parameters and to figure 10 for the timing diagram. output disable mode when the oe# input is at v ih , output from the device is disabled. the output pins are placed in the high imped- ance state. 10 am29f400b 21505e8 november 11, 2009 data sheet table 2. am29f400bt top boot block sector address table table 3. am29f400bb bottom boot block sector address table note: address range is a17:a-1 in byte mode and a17:a0 in word mode.see the ?word/byte configuration? section for more information. autoselect mode the autoselect mode provides manufacturer and device identification, and sector protection verification, through identifier codes output on dq7?dq0. this mode is primarily intended for programming equipment to automatically match a device to be programmed with its corresponding programming algorithm. however, the autoselect codes can also be accessed in-system through the command register. when using programming equipment, the autoselect mode requires v id (11.5 v to 12.5 v) on address pin a9. address pins a6, a1, and a0 must be as shown in table 4. in addition, when verifying sector protection, the sector address must appear on the appropriate highest order address bits (see tables 2 and 3). table 4 shows the remaining address bits that are don?t care. when all necessary bits have been set as required, the programming equipment may then read the corre- sponding identifier code on dq7?dq0. to access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in table 5. this method does not require v id . see ?command definitions? for details on using the autoselect mode. sector a17 a16 a15 a14 a13 a12 sector size (kbytes/ kwords) address range (in hexadecimal) (x8) address range (x16) address range sa0 0 0 0 x x x 64/32 00000h?0ffffh 00000h?07fffh sa1 0 0 1 x x x 64/32 10000h?1ffffh 08000h?0ffffh sa2 0 1 0 x x x 64/32 20000h?2ffffh 10000h?17fffh sa3 0 1 1 x x x 64/32 30000h?3ffffh 18000h?1ffffh sa4 1 0 0 x x x 64/32 40000h?4ffffh 20000h?27fffh sa5 1 0 1 x x x 64/32 50000h?5ffffh 28000h?2ffffh sa6 1 1 0 x x x 64/32 60000h?6ffffh 30000h?37fffh sa7 1 1 1 0 x x 32/16 70000h?77fffh 38000h?3bfffh sa8 1 1 1 1 0 0 8/4 78000h?79fffh 3c000h?3cfffh sa9 1 1 1 1 0 1 8/4 7a000h?7bfffh 3d000h?3dfffh sa10 1 1 1 1 1 x 16/8 7c000h?7ffffh 3e000h?3ffffh sector a17 a16 a15 a14 a13 a12 sector size (kbytes/kwords) address range (in hexadecimal) (x8) address range (x16) address range sa0 0 0 0 0 0 x 16/8 00000h?03fffh 00000h?01fffh sa1 0 0 0 0 1 0 8/4 04000h?05fffh 02000h?02fffh sa2 0 0 0 0 1 1 8/4 06000h?07fffh 03000h?03fffh sa3 0 0 0 1 x x 32/16 08000h?0ffffh 04000h?07fffh sa4 0 0 1 x x x 64/32 10000h?1ffffh 08000h?0ffffh sa5 0 1 0 x x x 64/32 20000h?2ffffh 10000h?17fffh sa6 0 1 1 x x x 64/32 30000h?3ffffh 18000h?1ffffh sa7 1 0 0 x x x 64/32 40000h?4ffffh 20000h?27fffh sa8 1 0 1 x x x 64/32 50000h?5ffffh 28000h?2ffffh sa9 1 1 0 x x x 64/32 60000h?6ffffh 30000h?37fffh sa10 1 1 1 x x x 64/32 70000h?7ffffh 38000h?3ffffh november 11, 2009 21505e8 am29f400b 11 data sheet table 4. am29f400b autoselect codes (high voltage method) l = logic low = v il , h = logic high = v ih , sa = sector address, x = don?t care. sector protection/unprotection the hardware sector protection feature disables both program and erase operations in any sector. the hard- ware sector unprotection feature re-enables both program and erase operations in previously protected sectors. sector protection/unprotection must be implemented using programming equipment. the procedure requires a high voltage (v id ) on address pin a9 and oe#. details on this method are provided in a supple- ment, publication number 20185. contact an amd representative to obtain a copy of this document. the device is shipped with all sectors unprotected. amd offers the option of programming and protecting sectors at its factory prior to shipping the device through amd?s expressflash? service. contact an amd representative for details. it is possible to determine whether a sector is protected or unprotected. see ?autoselect mode? for details. temporary sector unprotect this feature allows temporary unprotection of previ- ously protected sectors to change data in-system. the sector unprotect mode is activated by setting the reset# pin to v id . during this mode, formerly pro- tected sectors can be programmed or erased by selecting the sector addresses. once v id is removed from the reset# pin, all the previously protected sectors are protected again. figure 1 shows the algo- rithm, and figure 18 shows the timing diagrams, for this feature. figure 1. temporary sector unprotect operation description mode ce# oe# we# a17 to a12 a11 to a10 a9 a8 to a7 a6 a5 to a2 a1 a0 dq8 to dq15 dq7 to dq0 manufacturer id : amd l l h x x v id xlxll x 01h device id: am29f400b (top boot block) word l l h xxv id xlxlh 22h 23h byte l l h x 23h device id: am29f400b (bottom boot block) word l l h xxv id xlxlh 22h abh byte l l h x abh sector protection verification l l h sa x v id xlxhl x 01h (protected) x 00h (unprotected) start perform erase or program operations reset# = v ih temporary sector unprotect completed (note 2) reset# = v id (note 1) notes: 1. all protected sectors unprotected. 2. all previously protected sectors are protected once again. 12 am29f400b 21505e8 november 11, 2009 data sheet hardware data protection the command sequence requirement of unlock cycles for programming or erasing provides data protection against inadvertent writes (refer to table 5 for command definitions). in addition, the following hard- ware data protection measures prevent accidental erasure or programming, which might otherwise be caused by spurious system level signals during v cc power-up and power-down transitions, or from system noise. low v cc write inhibit when v cc is less than v lko , the device does not accept any write cycles. this protects data during v cc power-up and power-down. the command register and all internal program/erase circuits are disabled, and the device resets. subsequent writes are ignored until v cc is greater than v lko . the system must provide the proper signals to the control pins to prevent uninten- tional writes when v cc is greater than v lko . write pulse ?glitch? protection noise pulses of less than 5 ns (typical) on oe#, ce# or we# do not initiate a write cycle. logical inhibit write cycles are inhibited by holding any one of oe# = v il , ce# = v ih or we# = v ih . to initiate a write cycle, ce# and we# must be a logical zero while oe# is a logical one. power-up write inhibit if we# = ce# = v il and oe# = v ih during power up, the device does not accept commands on the rising edge of we#. the internal state machine is automatically reset to reading array data on power-up. november 11, 2009 21505e8 am29f400b 13 data sheet command definitions writing specific address and data commands or sequences into the command register initiates device operations. table 5 defines the valid register command sequences. writing incorrect address and data values or writing them in the improper sequence resets the device to reading array data. all addresses are latched on the falling edge of we# or ce#, whichever happens later. all data is latched on the rising edge of we# or ce#, whichever happens first. refer to the appropriate timing diagrams in the ?ac characteristics? section. reading array data the device is automatically set to reading array data after device power-up. no commands are required to retrieve data. the device is also ready to read array data after completing an embedded program or embedded erase algorithm. after the device accepts an erase suspend command, the device enters the erase suspend mode. the system can read array data using the standard read timings, except that if it reads at an address within erase-suspended sectors, the device outputs status data. after completing a programming operation in the erase suspend mode, the system may once again read array data with the same exception. see ?erase suspend/erase resume commands? for more infor- mation on this mode. the system must issue the reset command to re- enable the device for reading array data if dq5 goes high, or while in the autoselect mode. see the ?reset command? section, next. see also ?requirements for reading array data? in the ?device bus operations? section for more information. the read operations table provides the read parame- ters, and figure 9 shows the timing diagram. reset command writing the reset command to the device resets the device to reading array data. address bits are don?t care for this command. the reset command may be written between the sequence cycles in an erase command sequence before erasing begins. this resets the device to reading array data. once erasure begins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cycles in a program command sequence before programming begins. this resets the device to reading array data (also applies to programming in erase suspend mode). once programming begins, however, the device ignores reset commands until the operation is complete. the reset command may be written between the sequence cycles in an autoselect command sequence. once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during erase suspend). if dq5 goes high during a program or erase operation, writing the reset command returns the device to reading array data (also applies during erase suspend). autoselect command sequence the autoselect command sequence allows the host system to access the manu facturer and devices codes, and determine whether or not a sector is protected. table 5 shows the address and data requirements. this method is an alternative to that shown in table 4, which is intended for prom programmers and requires v id on address bit a9. the autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. the device then enters the autoselect mode, and the system may read at any address any number of times, without initiating another command sequence. a read cycle at address xx00h or retrieves the manu- facturer code. a read cycle at address xx01h in word mode (or 02h in byte mode) returns the device code. a read cycle containing a sector address (sa) and the address 02h in word mode (or 04h in byte mode) returns 01h if that sector is protected, or 00h if it is unprotected. refer to tables 2 and 3 for valid sector addresses. the system must write the reset command to exit the autoselect mode and return to reading array data. word/byte program command sequence the system may program the device by word or byte, depending on the state of the byte# pin. program- ming is a four-bus-cycle operation. the program command sequence is initiated by writing two unlock write cycles, followed by the program set-up command. the program address and data are written next, which in turn initiate the embedded program algorithm. the system is not required to provide further controls or tim- ings. the device automatically provides internally generated program pulses and verify the programmed cell margin. table 5 shows the address and data requirements for the byte program command sequence. when the embedded program algorithm is complete, the device then returns to reading array data and 14 am29f400b 21505e8 november 11, 2009 data sheet addresses are no longer latched. the system can determine the status of the program operation by using dq7, dq6, or ry/by#. see ?the erase resume command is valid only during the erase suspend mode.? for information on these status bits. any commands written to the device during the embedded program algorithm are ignored. note that a hardware reset immediately terminates the program- ming operation. the byte program command sequence should be reinitiated once the device has reset to reading array data, to ensure data integrity. programming is allowed in any sequence and across sector boundaries. a bit cannot be programmed from a ?0? back to a ?1?. attempting to do so may halt the operation and set dq5 to ?1?, or cause the data# polling algorithm to indicate the operation was suc- cessful. however, a succeedin g read will show that the data is still ?0?. only erase operations can convert a ?0? to a ?1?. note: see table 5 for program command sequence. figure 2. program operation chip erase command sequence chip erase is a six-bus-cycle operation. the chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the embedded erase algorithm. the device does not require the system to preprogram prior to erase. the embedded erase algo- rithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. the system is not required to provide any con- trols or timings during these operations. table 5 shows the address and data requirements for the chip erase command sequence. any commands written to the chip during the embedded erase algorithm are ignored. note that a hardware reset during the chip erase operation imme- diately terminates the operation. the chip erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. the system can determine the status of the erase oper- ation by using dq7, dq6, dq2, or ry/by#. see ?the erase resume command is valid only during the erase suspend mode.? for information on these status bits. when the embedded erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. figure 3 illustrates the algorithm for the erase opera- tion. see the ?erase/program operations? tables in ?ac characteristics? for parameters, and to figure 14 for timing diagrams. sector erase command sequence sector erase is a six bus cycle operation. the sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. two additional unlock write cycles are then followed by the address of the sector to be erased, and the sector erase command. table 5 shows the address and data requirements for the sector erase command sequence. the device does not require the system to preprogram the memory prior to erase. the embedded erase algo- rithm automatically programs and verifies the sector for an all zero data pattern prior to electrical erase. the system is not required to provide any controls or timings during these operations. after the command sequence is written, a sector erase time-out of 50 s begins. during the time-out period, additional sector addresses and sector erase com- mands may be written. loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. the time between these additional cycles must be less than 50 start write program command sequence data poll from system verify data? no yes last address? no yes programming completed increment address embedded program algorithm in progress november 11, 2009 21505e8 am29f400b 15 data sheet s, otherwise the last address and command might not be accepted, and erasure may begin. it is recom- mended that processor interrupts be disabled during this time to ensure all commands are accepted. the interrupts can be re-enabled after the last sector erase command is written. if the time between additional sector erase commands can be assumed to be less than 50 s, the system need not monitor dq3. any command other than sector erase or erase suspend during the time-out period resets the device to reading array data. the system must rewrite the command sequence and any additional sector addresses and commands. the system can monitor dq3 to determine if the sector erase timer has timed out. (see the ?dq3: sector erase timer? section.) the time-out begins from the rising edge of the final we# pulse in the command sequence. once the sector erase operation has begun, only the erase suspend command is valid. all other commands are ignored. note that a hardware reset during the sector erase operation immediately terminates the operation. the sector erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity. when the embedded erase algorithm is complete, the device returns to reading array data and addresses are no longer latched. the system can determine the status of the erase operation by using dq7, dq6, dq2, or ry/by#. (refer to ?the erase resume command is valid only during the erase suspend mode.? for infor- mation on these status bits.) figure 3 illustrates the algorithm for the erase opera- tion. refer to the ?erase/program operations? tables in the ?ac characteristics? section for parameters, and to figure 14 for timing diagrams. 16 am29f400b 21505e8 november 11, 2009 data sheet erase suspend/erase resume commands the erase suspend comma nd allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for erasure. this command is valid only during the sector erase operation, including the 50 s time-out period during the sector erase command sequence. the erase suspend command is ignored if written during the chip erase operation or embedded program algo- rithm. writing the erase suspend command during the sector erase time-out immediately terminates the time-out period and suspends the erase operation. addresses are ?don?t-cares? when writing the erase suspend command. when the erase suspend command is written during a sector erase operation, the device requires a maximum of 20 s to suspend the erase operation. however, when the erase suspend command is written during the sector erase time-out, the device immediately ter- minates the time-out period and suspends the erase operation. after the erase operation has been suspended, the system can read array data from or program data to any sector not selected for erasure. (the device ?erase suspends? all sectors selected for erasure.) normal read and write timings and command definitions apply. reading at any address within erase-suspended sectors produces status data on dq7?dq0. the system can use dq7, or dq6 and dq2 together, to determine if a sector is actively erasing or is erase-sus- pended. see ?the erase resume command is valid only during the erase suspend mode.? for information on these status bits. after an erase-suspended program operation is com- plete, the system can once again read array data within non-suspended sectors. the system can determine the status of the program operation using the dq7 or dq6 status bits, just as in the standard program oper- ation. see ?the erase resume command is valid only during the erase suspend mode.? for more information. the system may also write the autoselect command sequence when the device is in the erase suspend mode. the device allows reading autoselect codes even at addresses within erasing sectors, since the codes are not stored in the memory array. when the device exits the autoselect mode, the device reverts to the erase suspend mode, and is ready for another valid operation. see ?autoselect command sequence? for more information. the system must write the erase resume command (address bits are ?don?t care?) to exit the erase suspend mode and continue the sector erase operation. further writes of the resume command are ignored. another erase suspend command can be written after the device has resumed erasing. notes: 1. see table 5 for erase command sequence. 2. see ?dq3: sector erase timer? for more information. figure 3. erase operation start write erase command sequence data poll from system data = ffh? no yes erasure completed embedded erase algorithm in progress november 11, 2009 21505e8 am29f400b 17 data sheet table 5. am29f400b command definitions legend: x = don?t care ra = address of the memory location to be read. rd = data read from location ra during read operation. pa = address of the memory location to be programmed. addresses latch on the falling edge of the we# or ce# pulse, whichever happens later. pd = data to be programmed at location pa. data latches on the rising edge of we# or ce# pulse, whichever happens first. sa = address of the sector to be verified (in autoselect mode) or erased. address bits a17?a12 uniquely select any sector. notes: 1. see table 1 for description of bus operations. 2. all values are in hexadecimal. 3. except when reading array or autoselect data, all bus cycles are write operations. 4. data bits dq15?dq8 are don?t cares for unlock and command cycles. 5. address bits a17?a11 are don?t cares for unlock and command cycles, unless pa or sa required. 6. no unlock or command cycles required when reading array data. 7. the reset command is required to return to reading array data when device is in the autoselect mode, or if dq5 goes high (while the device is providing status data). 8. the fourth cycle of the autoselect command sequence is a read cycle. 9. the data is 00h for an unprotected sector and 01h for a protected sector. see?autoselect command sequence? for more information. 10. the system may read and program in non-erasing sectors, or enter the autoselect mode, when in the erase suspend mode. the erase suspend command is valid only during a sector erase operation. 11. the erase resume command is valid only during the erase suspend mode. command sequence (note 1) cycles bus cycles (notes 2?5) first second third fourth fifth sixth addr data addr data addr data addr data addr data addr data read (note 6) 1 ra rd reset (note 7) 1 xxx f0 autoselect (note 8) manufacturer id word 4 555 aa 2aa 55 555 90 x00 01 byte aaa 555 aaa device id, top boot block word 4 555 aa 2aa 55 555 90 x01 2223 byte aaa 555 aaa x02 23 device id, bottom boot block word 4 555 aa 2aa 55 555 90 x01 22ab byte aaa 555 aaa x02 ab sector protect verify (note 9) word 4 555 aa 2aa 55 555 90 (sa) x02 xx00 xx01 byte aaa 555 aaa (sa) x04 00 01 program word 4 555 aa 2aa 55 555 a0 pa pd byte aaa 555 aaa chip erase word 6 555 aa 2aa 55 555 80 555 aa 2aa 55 555 10 byte aaa 555 aaa aaa 555 aaa sector erase word 6 555 aa 2aa 55 555 80 555 aa 2aa 55 sa 30 byte aaa 555 aaa aaa 555 erase suspend (note 10) 1 xxx b0 erase resume (note 11) 1 xxx 30 18 am29f400b 21505e8 november 11, 2009 data sheet write operation status the device provides several bits to determine the status of a write operation: dq2, dq3, dq5, dq6, dq7, and ry/by#. table 6 and the following subsec- tions describe the functions of these bits. dq7, ry/ by#, and dq6 each offer a method for determining whether a program or erase operation is complete or in progress. these three bits are discussed first. dq7: data# polling the data# polling bit, dq7, indicates to the host system whether an embedded algorithm is in progress or completed, or whether the device is in erase sus- pend. data# polling is valid af ter the rising edge of the final we# pulse in the program or erase command sequence. during the embedded program algorithm, the device outputs on dq7 the complement of the datum pro- grammed to dq7. this dq7 status also applies to programming during erase suspend. when the embedded program algorithm is complete, the device outputs the datum programmed to dq7. the system must provide the program address to read valid status information on dq7. if a pr ogram address falls within a protected sector, data# polling on dq7 is active for approximately 2 s, then the device returns to reading array data. during the embedded erase algorithm, data# polling produces a ?0? on dq7. when the embedded erase algorithm is complete, or if the device enters the erase suspend mode, data# polling produces a ?1? on dq7. this is analogous to the complement/true datum output described for the embedded program algorithm: the erase function changes all the bits in a sector to ?1?; prior to this, the device outputs the ?complement,? or ?0.? the system must provide an address within any of the sectors selected for erasure to read valid status information on dq7. after an erase command sequence is written, if all sectors selected for erasing are protected, data# polling on dq7 is active for approximately 100 s, then the device returns to reading array data. if not all selected sectors are protected, the embedded erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. when the system detects dq7 has changed from the complement to true data, it can read valid data at dq7?dq0 on the following read cycles. this is because dq7 may change asynchronously with dq0?dq6 while output enable (oe#) is asserted low. figure 15, data# polling timings (during embedded algorithms), in the ?ac characteristics? section illus- trates this. table 6 shows the outputs for data# polling on dq7. figure 4 shows the data# polling algorithm. dq7 = data? yes no no dq5 = 1? no yes yes fail pass read dq7?dq0 addr = va read dq7?dq0 addr = va dq7 = data? start notes: 1. va = valid address for programming. during a sector erase operation, a valid address is an address within any sector selected for erasure. during chip erase, a valid address is any non-protected sector address. 2. dq7 should be rechecked even if dq5 = ?1? because dq7 may change simultaneously with dq5. figure 4. data# polling algorithm november 11, 2009 21505e8 am29f400b 19 data sheet ry/by#: ready/busy# the ry/by# is a dedicated, open-drain output pin that indicates whether an embedded algorithm is in progress or complete. the ry/by# status is valid after the rising edge of the final we# pulse in the command sequence. since ry/by# is an open-drain output, several ry/by# pins can be tied together in parallel with a pull-up resistor to v cc . if the output is low (busy), the device is actively erasing or programming. (this includes programming in the erase suspend mode.) if the output is high (ready), the device is ready to read array data (including during the erase suspend mode), or is in the standby mode. table 6 shows the outputs for ry/by#. figures 10, figure 13 and figure 14 shows ry/by# for reset, pro- gram, and erase operations, respectively. dq6: toggle bit i toggle bit i on dq6 indicates whether an embedded program or erase algorithm is in progress or complete, or whether the device has entered the erase suspend mode. toggle bit i may be read at any address, and is valid after the rising edge of the final we# pulse in the command sequence (prior to the program or erase operation), and during the sector erase time-out. during an embedded program or erase algorithm operation, successive read cycles to any address cause dq6 to toggle. the system may use either oe# or ce# to control the read cycles. when the operation is complete, dq6 stops toggling. after an erase command sequence is written, if all sectors selected for erasing are protected, dq6 toggles for approximately 100 s, then returns to reading array data. if not all selected sectors are protected, the embedded erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected. the system can use dq6 and dq2 together to deter- mine whether a sector is acti vely erasing or is erase- suspended. when the device is actively erasing (that is, the embedded erase algorithm is in progress), dq6 toggles. when the device enters the erase suspend mode, dq6 stops toggling. however, the system must also use dq2 to determine which sectors are erasing or erase-suspended. alternatively, the system can use dq7 (see the subsection on ?dq7: data# polling?). if a program address falls within a protected sector, dq6 toggles for approximately 2 s after the program command sequence is written, then returns to reading array data. dq6 also toggles during the erase-suspend-program mode, and stops toggling once the embedded program algorithm is complete. table 6 shows the outputs for toggle bit i on dq6. figure 5 shows the toggle bit algorithm. figure 16 in the ?ac characteristics? section shows the toggle bit timing diagrams. figure 17 shows the differences between dq2 and dq6 in graphical form. see also the subsec- tion on ?dq2: toggle bit ii?. dq2: toggle bit ii the ?toggle bit ii? on dq2, when used with dq6, indi- cates whether a particular sector is actively erasing (that is, the embedded erase algorithm is in progress), or whether that sector is erase-suspended. toggle bit ii is valid after the rising edge of the final we# pulse in the command sequence. dq2 toggles when the system reads at addresses within those sectors that have been selected for era- sure. (the system may use either oe# or ce# to control the read cycles.) but dq2 cannot distinguish whether the sector is actively erasing or is erase-sus- pended. dq6, by comparison, indicates whether the device is actively erasing, or is in erase suspend, but cannot distinguish which sectors are selected for era- sure. thus, both status bits are required for sector and mode information. refer to table 6 to compare outputs for dq2 and dq6. figure 5 shows the toggle bit algorithm in flowchart form, and the section ?dq2: toggle bit ii? explains the algorithm. see also the ?dq6: toggle bit i? subsection. figure 16 shows the toggle bit timing diagram. figure 17 shows the differences between dq2 and dq6 in graphical form. reading toggle bits dq6/dq2 refer to figure 5 for the following discussion. when- ever the system initially be gins reading toggle bit status, it must read dq7?dq0 at least twice in a row to determine whether a toggle bit is toggling. typically, the system would note and store the value of the toggle bit after the first read. after the second read, the system would compare the new value of the toggle bit with the first. if the toggle bit is not toggling, the device has com- pleted the program or erase operation. the system can read array data on dq7?dq0 on the following read cycle. however, if after the initia l two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of dq5 is high (see the section on dq5). if it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped tog- gling just as dq5 went high. if the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. if it is still toggling, the device did not complete the operation successfully, and the system must write the reset command to return to reading array data. 20 am29f400b 21505e8 november 11, 2009 data sheet the remaining scenario is that the system initially determines that the toggle bit is toggling and dq5 has not gone high. the system may continue to monitor the toggle bit and dq5 through successive read cycles, determining the status as described in the previous paragraph. alternatively, it may choose to perform other system tasks. in this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of figure 5). dq5: exceeded timing limits dq5 indicates whether the program or erase time has exceeded a specified intern al pulse count limit. under these conditions dq5 produces a ?1.? this is a failure condition that indicates the program or erase cycle was not successfully completed. the dq5 failure condition may appear if the system tries to program a ?1? to a location that is previously pro- grammed to ?0.? only an erase operation can change a ?0? back to a ?1.? under this condition, the device halts the operation, and when the operation has exceeded the timing limits, dq5 produces a ?1.? under both these conditions, the system must issue the reset command to return the device to reading array data. dq3: sector erase timer after writing a sector erase command sequence, the system may read dq3 to determine whether or not an erase operation has begun. (the sector erase timer does not apply to the chip erase command.) if addi- tional sectors are selected for erasure, the entire time- out also applies after each additional sector erase com- mand. when the time-out is complete, dq3 switches from ?0? to ?1.? if the time between additional sector erase commands from the system can be assumed to be less than 50 s, the system need not monitor dq3. see also the ?sector erase command sequence? section. after the sector erase command sequence is written, the system should read the status on dq7 (data# polling) or dq6 (toggle bit i) to ensure the device has accepted the command sequence, and then read dq3. if dq3 is ?1?, the internally controlled erase cycle has begun; all further commands (other than erase sus- pend) are ignored until the erase operation is complete. if dq3 is ?0?, the device will accept additional sector erase commands. to ensure the command has been accepted, the system software should check the status of dq3 prior to and following each subsequent sector erase command. if dq3 is high on the second status check, the last command might not have been accepted. table 6 shows the outputs for dq3. start no yes yes dq5 = 1? no yes toggle bit = toggle? no program/erase operation not complete, write reset command program/erase operation complete read dq7?dq0 toggle bit = toggle? read dq7?dq0 twice read dq7?dq0 notes: 1. read toggle bit twice to determine whether or not it is toggling. see text. 2. recheck toggle bit because it may stop toggling as dq5 changes to ?1?. see text. figure 5. toggle bit algorithm (notes 1, 2) (note 1) november 11, 2009 21505e8 am29f400b 21 data sheet table 6. write operation status notes: 1. dq5 switches to ?1? when an embedded program or embedde d erase operation has exceeded the maximum timing limits. see ?dq5: exceeded timing limits? for more information. 2. dq7 and dq2 require a valid address when reading status inform ation. refer to the appropriate subsection for further details. operation dq7 (note 2) dq6 dq5 (note 1) dq3 dq2 (note 2) ry/by# standard mode embedded program algorithm dq7# toggle 0 n/a no toggle 0 embedded erase algorithm 0 toggle 0 1 toggle 0 erase suspend mode reading within erase suspended sector 1 no toggle 0 n/a toggle 1 reading within non-erase suspended sector data data data data data 1 erase-suspend-program dq7# toggle 0 n/a n/a 0 22 am29f400b 21505e8 november 11, 2009 data sheet absolute maximum ratings storage temperature plastic packages . . . . . . . . . . . . . . .?65 c to +150 c ambient temperature with power applied. . . . . . . . . . . . . .?55 c to +125 c voltage with respect to ground v cc (note 1) . . . . . . . . . . . . . . . . ?2.0 v to +7.0 v a9 , oe# , and reset# (note 2). . . . . . . . . . . .?2.0 v to +12.5 v all other pins (note 1) . . . . . . . . . ?0.5 v to +7.0 v output short circuit current (note 3) . . . . . . 200 ma notes: 1. minimum dc voltage on input or i/o pins is ?0.5 v. during voltage transitions, input or i/o pins may overshoot v ss to ?2.0 v for periods of up to 20 ns. see figure 6. maximum dc voltage on input or i/o pins is v cc +0.5 v. during voltage transitions, input or i/o pins may overshoot to v cc +2.0 v for periods up to 20 ns. see figure 7. 2. minimum dc input voltage on pins a9, oe#, and reset# is ?0.5 v. during voltage transitions, a9, oe#, and reset# may overshoot v ss to ?2.0 v for periods of up to 20 ns. see figure 6. maximum dc input voltage on pin a9 is +12.5 v which may overshoot to +13.5 v for periods up to 20 ns. 3. no more than one output may be shorted to ground at a time. duration of the short ci rcuit should not be greater than one second. note: stresses above those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability. operating ranges industrial (i) devices ambient temperature (t a ) . . . . . . . . . ?40c to +85c extended (e) devices ambient temperature (t a ) . . . . . . . . ?55c to +125c v cc supply voltages v cc for 5% devices . . . . . . . . . . .+4.75 v to +5.25 v v cc for 10% devices . . . . . . . . . . . .+4.5 v to +5.5 v note: operating ranges define thos e limits between which the functionality of the device is guaranteed. 20 ns 20 ns +0.8 v ?0.5 v 20 ns ?2.0 v figure 6. maximum negative overshoot waveform 20 ns 20 ns v cc +2.0 v v cc +0.5 v 20 ns 2.0 v figure 7. maximum positive overshoot waveform november 11, 2009 21505e8 am29f400b 23 data sheet dc characteristics ttl/nmos compatible notes: 1. the i cc current listed is typically le ss than 2 ma/mhz, with oe# at v ih .. 2. maximum i cc specifications are tested with v cc = v ccmax . 3. i cc active while embedded erase or embedded program is in progress. 4. not 100% tested. parameter description test conditions min typ max unit i li input load current v in = v ss to v cc , v cc = v cc max 1.0 a i lit a9, oe#, reset# input load current v cc = v cc max ; a9, oe#, reset# = 12.5 v 50 a i lo output leakage current v out = v ss to v cc , v cc = v cc max 1.0 a i cc1 v cc active read current (notes 1, 2) ce# = v il , oe# = v ih , f = 5 mhz, byte mode 19 40 ma ce# = v il , oe# = v ih , f = 5 mhz, word mode 19 50 ma i cc2 v cc active write current (notes 2, 3, 4) ce# = v il , oe# = v ih 36 60 ma i cc3 v cc standby current (note 2) ce#, reset#, and oe# = v ih 0.4 1 ma v il input low voltage ?0.5 0.8 v v ih input high voltage 2.0 v cc +0.5 v v id voltage for autoselect and temporary sector unprotect v cc = 5.0 v 11.5 12.5 v v ol output low voltage i ol = 5.8 ma, v cc = v cc min 0.45 v v oh output high voltage i oh = ?2.5 ma, v cc = v cc min 2.4 v v lko low v cc lock-out voltage 3.2 4.2 v 24 am29f400b 21505e8 november 11, 2009 data sheet dc characteristics cmos compatible notes: 1. the i cc current listed is typically le ss than 2 ma/mhz, with oe# at v ih . 2. maximum i cc specifications are tested with v cc = v ccmax . 3. i cc active while embedded erase or embedded program is in progress. 4. not 100% tested. 5. i cc3 = 20 a max at extended temperature (>+85 c). parameter description test conditions min typ max unit i li input load current v in = v ss to v cc , v cc = v cc max 1.0 a i lit a9, oe#, reset# input load current v cc = v cc max ; a9, oe#, reset# = 12.5 v 50 a i lo output leakage current v out = v ss to v cc , v cc = v cc max 1.0 a i cc1 v cc active read current (notes 1, 2) ce# = v il , oe# = v ih , f = 5 mhz, byte mode 20 40 ma ce# = v il , oe# = v ih , f = 5 mhz, word mode 28 50 i cc2 v cc active write current (notes 2, 3, 4) ce# = v il , oe# = v ih 30 50 ma i cc3 v cc standby current (notes 2, 5 oe# = v ih , ce# and reset# = v cc 0.5 v 0.3 5 a v il input low voltage ?0.5 0.8 v v ih input high voltage 0.7 x v cc v cc + 0.3 v v id voltage for autoselect and temporary sector unprotect v cc = 5.0 v 11.5 12.5 v v ol output low voltage i ol = 5.8 ma, v cc = v cc min 0.45 v v oh1 output high voltage i oh = ?2.5 ma, v cc = v cc min 0.85 v cc v v oh2 i oh = ?100 a, v cc = v cc min v cc ?0. 4 v lko low v cc lock-out voltage 3.2 4.2 v november 11, 2009 21505e8 am29f400b 25 data sheet test conditions table 7. test specifications key to switching waveforms 2.7 k c l 6.2 k 5.0 v device under te s t figure 8. test setup note: diodes are in3064 or equivalent. test condition -45, -50, -55 all others unit output load 1 ttl gate output load capacitance, c l (including jig capacitance) 30 100 pf input rise and fall times 5 20 ns input pulse leve ls 0.0?3.0 0.45?2.4 v input timing measurement reference levels 1.5 0.8, 2.0 v output timing measurement reference levels 1.5 0.8, 2.0 v waveform inputs outputs steady changing from h to l changing from l to h don?t care, any change permitted changing, state unknown does not apply center line is high impedance state (high z) 26 am29f400b 21505e8 november 11, 2009 data sheet ac characteristics read operations notes: 1. not 100% tested. 2. see figure 8 and table 7 for test specifications. parameter description speed options jedec std test setup -45 -50 -55 -70 -90 unit t avav t rc read cycle time (note 1) min 45 50 55 70 90 ns t avqv t acc address to output delay ce# = v il oe# = v il max4550557090ns t elqv t ce chip enable to output delay oe# = v il max4550557090ns t glqv t oe output enable to output delay max 30 30 30 30 35 ns t ehqz t df chip enable to output high z (note 1) max1515152020ns t ghqz t df output enable to output high z (note 1) max1515152020ns t oeh output enable hold time (note 1) read min 0 ns toggle and data# polling min 10 ns t axqx t oh output hold time from addresses, ce# or oe#, whichever occurs first (note 1) min 0 ns t ce outputs we# addresses ce# oe# high z output valid high z addresses stable t rc t acc t oeh t oe 0 v ry/by# reset# t df t oh figure 9. read operations timings november 11, 2009 21505e8 am29f400b 27 data sheet ac characteristics hardware reset (reset#) note: not 100% tested. parameter description all speed options jedec std test setup unit t ready reset# pin low (during embedded algorithms) to read or write (see note) max 20 s t ready reset# pin low (not during embedded algorithms) to read or write (see note) max 500 ns t rp reset# pulse width min 500 ns t rh reset# high time before read (see note) min 50 ns t rb ry/by# recovery time min 0 ns reset# ry/by# ry/by# t rp t ready reset timings not during embedded algorithms t ready ce#, oe# t rh ce#, oe# reset timings during embedded algorithms reset# t rp t rb figure 10. reset# timings 28 am29f400b 21505e8 november 11, 2009 data sheet ac characteristics word/byte configuration (byte#) parameter speed options jedec std description -45 -50 -55 -70 -90 unit t elfl/ t elfh ce# to byte# switching low or high max 5 ns t flqz byte# switching low to output high z max 15 15 15 20 20 ns t fhqv byte# switching high to output active min 45 50 55 70 90 ns dq15 output data output (dq0?dq7) ce# oe# byte# t elfl dq0?dq14 data output (dq0?dq14) dq15/a-1 address input t flqz byte# switching from word to byte mode dq15 output data output (dq0?dq7) byte# t elfh dq0?dq14 data output (dq0?dq14) dq15/a-1 address input t fhqv byte# switching from byte to word mode figure 11. byte# timings for read operations note: refer to the erase/program operations table for t as and t ah specifications. figure 12. byte# timings for write operations ce# we# byte# the falling edge of the last we# signal t hold (t ah ) t set (t as ) november 11, 2009 21505e8 am29f400b 29 data sheet ac characteristics erase/program operations notes: 1. not 100% tested. 2. see the ?erase and programming performance? section for more information. parameter speed options jedec std description -45 -50 -55 -70 -90 unit t avav t wc write cycle time (note 1) min 45 50 55 70 90 ns t avwl t as address setup time min 0 ns t wlax t ah address hold time min 45 45 45 45 45 ns t dvwh t ds data setup time min2525253045ns t whdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghwl t ghwl read recovery time before write (oe# high to we# low) min 0 ns t elwl t cs ce# setup time min 0 ns t wheh t ch ce# hold time min 0 ns t wlwh t wp write pulse width min 30 30 30 35 45 ns t whwl t wph write pulse width high min 20 ns t whwh1 t whwh1 programming operation (note 2) byte typ 7 s word typ 12 t whwh2 t whwh2 sector erase operation (note 2) typ 1 sec t vcs v cc setup time (note 1) min 50 s t rb recovery time from ry/by# min 0 ns t busy program/erase valid to ry/by# delay max 30 30 30 30 35 ns 30 am29f400b 21505e8 november 11, 2009 data sheet ac characteristics oe# we# ce# v cc data addresses t ds t ah t dh t wp pd t whwh1 t wc t as t wph t vcs 555h pa pa read status data (last two cycles) a0h t cs status d out program command sequence (last two cycles) ry/by# t rb t busy t ch pa notes: 1. pa = program address, pd = program data, d out is the true data at the program address. 2. illustration shows device in word mode. figure 13. program operation timings november 11, 2009 21505e8 am29f400b 31 data sheet ac characteristics oe# ce# addresses v cc we# data 2aah sa t ah t wp t wc t as t wph 555h for chip erase 10 for chip erase 30h t ds t vcs t cs t dh 55h t ch in progress complete t whwh2 va va erase command sequence (last two cycles) read status data ry/by# t rb t busy notes: 1. sa = sector address (for se ctor erase), va = valid address for reading status data (see ?write operation status?). 2. illustration shows device in word mode. figure 14. chip/sector erase operation timings 32 am29f400b 21505e8 november 11, 2009 data sheet ac characteristics we# ce# oe# high z t oe high z dq7 dq0?dq6 ry/by# t busy complement true addresses va t oeh t ce t ch t oh t df va va status data complement status data true valid data valid data t acc t rc note: va = valid address. illustration shows first status cycle after command sequence, last status read cycle, and array data read c ycle. figure 15. data# polling timings (during embedded algorithms) we# ce# oe# high z t oe dq6/dq2 ry/by# t busy addresses va t oeh t ce t ch t oh t df va va t acc t rc valid data valid status valid status (first read) (second read) (stops toggling) valid status va note: va = valid address; not required for dq6. illustration shows firs t two status cycle after command sequence, last status read cy cle, and array data read cycle. figure 16. toggle bit timings (during embedded algorithms) november 11, 2009 21505e8 am29f400b 33 data sheet ac characteristics temporary sector unprotect note: not 100% tested. parameter all speed options jedec std description unit t vidr v id rise and fall time (see note) min 500 ns t rsp reset# setup time for temporary sector unprotect min 4 s note: the system may use either ce# or oe# to toggle dq2 and dq 6. dq2 toggles only when read at an address within an erase-suspended sector. figure 17. dq2 vs. dq6 enter erase erase erase enter erase suspend program erase suspend read erase suspend read erase we# dq6 dq2 erase complete erase suspend suspend program resume embedded erasing reset# t vidr 12 v 0 or 5 v ce# we# ry/by# t vidr t rsp program or erase command sequence 0 or 5 v figure 18. temporary sector unprotect timing diagram 34 am29f400b 21505e8 november 11, 2009 data sheet ac characteristics alternate ce# cont rolled erase/pr ogram operations notes: 1. not 100% tested. 2. see the ?erase and programming performance? section for more information. parameter speed options jedec std description -45 -50 -55 -70 -90 unit t avav t wc write cycle time (note 1) min 45 50 55 70 90 ns t avel t as address setup time min 0 ns t elax t ah address hold time min4545454545ns t dveh t ds data setup time min2525253045ns t ehdx t dh data hold time min 0 ns t oes output enable setup time min 0 ns t ghel t ghel read recovery time before write (oe# high to we# low) min 0 ns t wlel t ws we# setup time min 0 ns t ehwh t wh we# hold time min 0 ns t eleh t cp ce# pulse width min 30 30 30 35 45 ns t ehel t cph ce# pulse width high min 20 ns t whwh1 t whwh1 programming operation (note 2) byte typ 7 s word typ 12 t whwh2 t whwh2 sector erase operation (note 2) typ 1 sec november 11, 2009 21505e8 am29f400b 35 data sheet ac characteristics t ghel t ws oe# ce# we# reset# t ds data t ah addresses t dh t cp dq7# d out t wc t as t cph pa data# polling a0 for program 55 for erase t rh t whwh1 or 2 ry/by# t wh pd for program 30 for sector erase 10 for chip erase 555 for program 2aa for erase pa for program sa for sector erase 555 for chip erase t busy notes: 1. pa = program address, pd = program data, sa = sect or address, dq7# = complement of data input, d out = array data. 2. figure indicates t he last two bus cycles of the command se quence, with the device in word mode. figure 19. alternate ce# contro lled write operation timings 36 am29f400b 21505e8 november 11, 2009 data sheet erase and programming performance notes: 1. typical program and erase times assume the following conditions: 25 c, 5.0 v v cc , 1,000,000 cycles. additionally, programming typicals assume checkerboard pattern. 2. under worst case conditions of 90c, v cc = 4.5 v, 1,000,000 cycles. 3. the typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maxi mum program times listed. 4. in the pre-programming step of the embedded erase algorithm, all bytes are programmed to 00h before erasure. 5. system-level overhead is the time required to execute the four-bus-cycle sequence for the program command. see table 5 for further information on command definitions. 6. the device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles. latchup characteristics includes all pins except v cc . test conditions: v cc = 5.0 v, one pin at a time. tsop and so pi n capacitance notes: 1. sampled, not 100% tested. 2. test conditions t a = 25c, f = 1.0 mhz. data retention parameter typ (note 1) max (note 2) unit comments sector erase time 1.0 8 s excludes 00h programming prior to erasure chip erase time 11 s byte programming time 7 300 s excludes system level overhead (note 5) word programming time 12 500 s chip programming time (note 3) byte mode 3.6 10.8 s word mode 3.1 9.3 s description min max input voltage with respect to v ss on all pins except i/o pins (including a9, oe#, and reset#) ?1.0 v 12.5 v input voltage with respect to v ss on all i/o pins ?1.0 v v cc + 1.0 v v cc current ?100 ma +100 ma parameter symbol parameter description test setup typ max unit c in input capacitance v in = 0 6 7.5 pf c out output capacitance v out = 0 8.5 12 pf c in2 control pin capacitance v in = 0 7.5 9 pf parameter test conditions min unit minimum pattern data retention time 150 c10 years 125 c20 years november 11, 2009 21505e8 am29f400b 37 data sheet physical dimensions ts 048?48-pin standard thin small outline package dwg rev aa; 10/99 38 am29f400b 21505e8 november 11, 2009 data sheet physical dimensions so 044?44-pin smal l outline package dwg rev ac; 10/99 november 11, 2009 21505e8 am29f400b 39 data sheet revision summary revision a (august 1997) initial release. revision b (october 1997) global added -55 and -60 speed options, deleted -65 speed option. changed data sheet designation from advance information to preliminary. connection diagrams corrected pinouts on all packages: deleted a18. table 1, device bus operations revised to indicate inputs for both ce# and reset# are required for standby mode. sector protection/unprotection corrected text to indicate that these functions can only be implemented using programming equipment. program command sequence changed to indicate data# polling is active for 2 s after a program command sequence if the sector spec- ified is protected. sector erase command sequence and dq3: sector erase timer corrected sector erase timeout to 50 s. erase suspend command changed to indicate that the device suspends the erase operation a maximum of 20 s after the rising edge of we#. dc characteristics changed to indicate v id min and max values are 11.5 to 12.5 v,with a v cc test condition of 5.0 v. revised i lit to 50 a. added i cc4 specification. added typical values to ttl/nmos table. revised cmos typical standby current (i cc3 ). figure 14: chip/sector erase operation timings; figure 19: alternate ce# controlled write operation timings corrected hexadecimal values in address and data waveforms. ac characteristics, erase/program operations corrected t ah specification for -90 speed option to 45 ns. erase and programming performance corrected word and chip programming times. revision c (january 1998) global formatted for consistency with other 5.0 volt-only data sheets. ac characteristics changed t df and t flqz to 15 ns for -55 speed option. revision c+1 (february 1998) table 2, top boot block sector address table corrected the sector size for sa10 to 16 kbytes/ 8 kwords. dc characteristics?ttl/nmos compatible deleted note 4. revision c+2 (april 1998) distinctive characteristics changed minimum 100k write/erase cycles guaran- teed to 1,000,000. product selector guide, ordering information added 55 ns 10% speed option. ac characteristics word/byte configuration: changed t fhqv specification for 55 ns device. erase/program operations: changed t whwh1 word mode specification to 12 s. corrected the notes refer- ence for t whwh1 and t whwh2 . these parameters are 100% tested. corrected the note reference for t vcs . this parameter is not 100% tested. changed t ds and t cp specifications for 55 ns device. alternate ce# controlled erase/program operations: changed t whwh1 word mode specification to 12 s. corrected the notes reference for t whwh1 and t whwh2 . these parameters are 100% tested. changed t ds and t cp specifications for 55 ns device. temporary sector unprotect table added note reference for t vidr . this parameter is not 100% tested. erase and programming performance changed minimum 100k program and erase cycles guaranteed to 1,000,000. revision c+3 (june 1998) distinctive characteristics high performance: changed ?access times as fast as 55 ns? to ?access times as fast as 45 ns?. 40 am29f400b 21505e8 november 11, 2009 data sheet general description third paragraph: added 45 ns to access times. product selector guide added the -45 speed option for v cc = 5.0 v 5% and the -55 speed option for v cc = 5.0 v 10%. ordering information added ?special designation? to ?optional processing? heading; added ?0? for 55 ns 10% vcc, deleted burn-in. burn-in is available by contacting an amd representative. added -55 10% and -45 speed options to the list of valid combinations. added extended temperature ratings to -55 5% valid combinations. table 1, device bus operations changed the byte#=v il input for dq8?dq15 during temporary sector unprotect to ?don?t care? (x). figure 6. maximum negative undershoot waveform corrected figure title. table 7, test specifications test load capacitance: removed 55 ns speed option from and added -45 speed option to the 30 pf. dc characteristics removed v cc = v cc max test condition for i cc1 ? i cc3 . v cc max is only valid for max specs. ac characteristics added the -45 speed option. revision c+4 (august 1998) ordering information added extended temperature combinations to the -55, 10% speed option. deleted the -60 speed option. revision d (january 1999) distinctive characteristics added: 20-year data retention at 125 c ? reliable operation for the life of the system dc characteristics?ttl/nmos compatible i cc1 , i cc2 , i cc3 : added note 2 ?maximum i cc specifications are tested with v cc = v ccmax ?. dc characteristics? cmos compatible i cc1 , i cc2 , i cc3 : added note 2 ?maximum i cc specifications are tested with v cc = v ccmax ?. erase and programming performance deleted ?(4.75 v for -45 and -55xx0)? from note 2. revision d+1 (july 2, 1999) global added references to availability of device in known good die (kgd) form. revision e (november 15, 1999) ac characteristics?figure 13. program operations timing and figure 14. chip/sector erase operations deleted t ghwl and changed oe# waveform to start at high. physical dimensions replaced figures with more detailed illustrations. revision e+1 (november 30, 2000) added table of contents. reinserted revision summa- ries for revisions a and b. revision e+2 (j une 4, 2004) ordering information added pb-free opns revision e+3 (december 22, 2005) global deleted 150 ns speed option and reverse tsop pack- age from document. revision e4 (may 18, 2006) added ?not recommended for new designs? note. ac characteristics changed t busy specification to maximium value. revision e5 (november 1, 2006) deleted ?not recommended for new designs? note and retired product designation. revision e6 (march 3, 2009) global added obsolescence information. revision e7 (august 3, 2009) global removed obsolescence information. revision e8 (november 11, 2009) global removed 120 ns speed option. removed all commercial temperature range options. november 11, 2009 21505e8 am29f400b 41 data sheet colophon the products described in this document are designed, developed and manufactured as contemplated for general use, including wit hout limitation, ordinary industrial use, genera l office use, personal use, and household use, but are not designed, developed and m anufactured as contemplated (1) for any use that includes fatal risks or dangers t hat, unless extremely high safety is secured, could have a s erious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic contro l, mass transport control, medical life support system, missile launch control in we apon system), or (2) for any use where chance of failure is intole rable (i.e., submersible repeater and artifi cial satellite). please note that spansion will not be liable to you and/or any third party for any claims or damages arising in connection with abo ve-mentioned uses of the products. any semic onductor devices have an inherent chance of failure. you must protect agains t injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. if any products described in this document r epresent goods or technologies s ubject to certain restriction s on export under the foreign exchange and foreign trade law of japan, the us export ad ministration regulations or the applicable laws of any oth er country, the prior authorization by the respective government entity will be required for export of those products. trademarks and notice the contents of this document are subjec t to change without notice. this document ma y contain information on a spansion product under development by spansion. spansion reserves the right to change or discontinue work on any product without notice. the informati on in this document is provided as is without warran ty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. spansion assume s no liability for any damages of any kind arising out of the use of the information in this document. copyright ? 1997?2005 advanced micro devices, inc. all rights reserv ed. amd, the amd logo, and combinations thereof are registe red trademarks of advanced micro devices, in c. product names used in this publication ar e for identification purposes only and may be trademarks of their respective companies. copyright ? 2006-2009 spansion inc. all rights reserved. spansion ? , the spansion logo, mirrorbit ? , mirrorbit ? eclipse?, ornand?, ecoram? and combinations thereof, are trademar ks and registered trademarks of spansion llc in the united states and other count ries. other names used are for informati onal purposes only and may be trademarks of their respective owners. |
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